True-Green Photonic Crystal LED Based on GaN Nanostripes
نویسنده
چکیده
A bottom-up approach for photonic crystal emitters and LEDs with semipolar quantum wells on large foreign substrates is presented. Structured c-oriented GaN/AlGaN templates are overgrown with GaN nanostripes and semipolar QWs emitting in the true-green spectral region. After embedding, the stripes and the growth mask act as one-dimensional (1D) photonic crystal. Electroluminescence shows bright green emission. The photonic crystal dispersion relation is simulated and confirmed by angle-resolved spectroscopy, structural analysis is performed by transmission electron microscopy.
منابع مشابه
Galliumnitride Nanostripes with Semipolar Quantum Wells for LED and Laser Applications
We present LEDs and asymmetric waveguide structures with embedded nanostripes and semipolar {101̄1} quantum wells. All samples are based on c-plane GaN/AlGaN templates grown heteroepitaxially on c-plane sapphire substrates by metal organic vapour phase epitaxy. The nanostripes have a periodicity of 250 nm and were achieved by selective area epitaxy with dielectric growth masks structured on full...
متن کاملEnhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and t...
متن کاملBlue to true green LEDs with semipolar quantum wells based on GaN nanostripes
Recent advances of the performance of GaN based devices with semipolar quantum wells have been realized homoepitaxially on pseudo bulk substrates which are typically small in size and high in cost. These limitations fuel the search for cheap and large area alternatives. Heteroepitaxial growth on sapphire substrates is well established with excellent results for polar GaN structures the growth o...
متن کاملFabrication of three-dimensional autocloned photonic crystal on sapphire substrate.
We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta2O5/SiO2 coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to 470 nm wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED...
متن کاملA Systematic Approach to Photonic Crystal Based Metamaterial Design
Photonic crystal design procedure for negative refraction has so far been based on trial and error. In this paper, for the first time, a novel and systematic design procedure based on physical and mathematical properties of photonic crystals is proposed to design crystal equi-frequency contours (EFCs) to produce negative refraction. The EFC design is performed by the help of rectangular stair-c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015